From Semiclassical Semiconductors to Novel Spintronic Devices


by

Halyna Khlyap

DOI: 10.2174/97816080514581130101
eISBN: 978-1-60805-145-8, 2013
ISBN: 978-1-60805-146-5



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Indexed in: Scopus

Dramatic developments in developing semiconductor device technology and nanotechnologies over the last decades has placed increasing d...[view complete introduction]

Table of Contents

Foreword

- Pp. i- (1)

V. Bilozertseva

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Preface

- Pp. ii-iii (2)

Halyna Khlyap

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List of Contributors

- Pp. iv- (1)

Halyna Khlyap

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Narrow Gap Semiconductors Based on Mercury-Cadmium Telluride

- Pp. 3-55 (53)

Petro G. Sydorchuk and Halyna Khlyap

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High-Effective Solar Cells, Thermodynamics and Physics of the Universe

- Pp. 56-96 (41)

Viktor I. Laptev and Halyna Khlyap

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Modeling of Thin Film-Based Semiconductor Active Elements

- Pp. 97-136 (40)

Halyna Khlyap

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Novel Spintronics Devices

- Pp. 137-187 (51)

Halyna Khlyap

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Index

- Pp. 188-189 (2)

Halyna Khlyap

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Foreword

The electronic book (e-lectures) “From Semiclassical Semiconductors to Novel Spintronic Devices“ edited by Dr. H. Khlyap presents an interesting supplement to traditional manuals and textbooks devoted to microelectronics and physics of semiconductor devices.

E-lectures provide very useful information about narrow-gap semiconductor solid solutions Hg(Zn)CdTe (there is a material of choice for novel IR-photodevices), thermodynamical description of high-effective solar energy conversion, basic knowledge related to the semiconductor devices modeling and a good review of novel spintronics devices. This supplement can be significantly helpful for undergraduate, graduate and early PhD students beginning their professional activities in modern semiconductor physics, nano(micro)electronics and technologies.

Supplying necessary fundamental information, this collection of e-lectures may also serve as a reference book for professionals switching out their branches of research and development.

V. Bilozertseva
National Polytechnical University "KPI"
Kharkiv Ukraine


Preface

The dramatic developments in the area of semiconductor device technology and nanotechnologies over the last decades has placed increasing demands on the fabrication and design technologies, where it is now necessary to implement nanoscale gate geometries to achieve the highest performance. The need to understand and model the operation of nano-devices is fundamental to future development and optimal design.

The key to the understanding of semiconductor nanoscaled active elements and devices based on smart materials (for example, ZnCdHgTe for far-infrared optoelectronics) lies in development of sophisticated models representing the physical and electrical characteristics as well as operation conditions. Conventional silicon-based solar cells production accounts principal characteristics of the semiconductor compounds presenting the main building part of the device. The first part of the lecture devoted to high-effective solar cells reports unique results on fabrication and quite uncommon performance of Sibased solar cells with novel contacts chemically deposited on traditionally prepared semiconductor part of the solar cell. How does the high-effective solar radiation conversion occur and what thermodynamics aspects are to be involved in theoretical explanation and further practical applications? The next part of the e-lecture proposes answers. The thermodynamics is an effective tool used in the physics of the Universe. Photonic condensate and the relic radiation are not only exotic objects for theoretical astrophysics but also present possible power tools for achieving high-effective energy conversion. This question is considered in further parts of this lecture.

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. The basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin polarized transport in semiconductors and metals are of special importance. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling [3]. This e-book is intended to provide review lectures on latest achievements in growth technology, characterization methods and nanoscaled active elements modeling for novel device design and applications for graduate and PhD students as well as for professionals in mentioned fields of device technology and modeling.

Halyna Khlyap
Kaiserslautern
Germany

List of Contributors

Editor(s):
Halyna Khlyap
Kaiserslautern
Germany




Contributor(s):
Viktor I. Laptev
Russian New University,
Moscow
Russian Federation
/
Holzgerlingen
Germany


Petro G. Sydorchuk
State Pedagogical University
Drohobych
Ukraine


Halyna Khlyap
Kaiserslautern
Germany




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