Chapter 1
Narrow Gap Semiconductors Based on Mercury-Cadmium Telluride
Petro G. Sydorchuk and Halyna Khlyap
Abstract
The fundamentals of technologies applied for preparation of narrow-gap semiconductors Hg(Zn)CdTe are presented. The lecture discusses questions related to the technologies and device applications of active elements based on HgZnCdTe materials.
Total Pages: 3-55 (53)
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