Chapter 1

Narrow Gap Semiconductors Based on Mercury-Cadmium Telluride

Petro G. Sydorchuk and Halyna Khlyap

Abstract

The fundamentals of technologies applied for preparation of narrow-gap semiconductors Hg(Zn)CdTe are presented. The lecture discusses questions related to the technologies and device applications of active elements based on HgZnCdTe materials.

Total Pages: 3-55 (53)

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