Chapter 6
Amorphous Layer Thickness
Kunihiro Suzuki
Abstract
A parameter of thorough dose, &#934;<sub>a/c</sub> is introduced to express continuous amorphous layer thickness. &#934;<sub>a/c</sub> is defined by the dose of ions that pass through the amorphous/crystal interface, and the thickness of amorphous layer d<sub>a</sub> is expressed by &#934;<sub>a/c</sub> combined with parameters for ion implantation profiles. &#934;<sub>a/c</sub> is independent of ion implantation conditions but depends on impurities. &#934;<sub>a/c</sub> for Ge, Si, As, P, B, In, and Sb were evaluated. Consequently, we can predict d<sub>a</sub> over wide ion implantation conditions.
Total Pages: 78-120 (43)
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