Chapter 5

Thermal Oxidation

Kunihiro Suzuki

Abstract

Oxidation model is derived by considering diffusion fluxes in gas phase atmosphere, growing oxide layer, and reaction of oxidant and substrate Si atoms at SiO<sub>2</sub>/Si interface. This model gives simple time dependence of growing SiO<sub>2</sub> layer thickness. The impurities in the Si substrate redistribute during the oxidation. We treat the redistributed profile as moving boundary one, and derive the corresponding model. The model well predicts B depletion at the SiO<sub>2</sub>/Si interface.

Total Pages: 101-119 (19)

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