Chapter 5
New Narrow-gap Semiconductor ZnCdHgTe: Growth Technology and Principal Features of ZnCdHgTe-Based Structures
Halyna Khlyap
Abstract
Preparation and main electrophysical characteristics of narrow-gap semiconductor ZnCdHgTe thin films are described. Experimental room-temperature current-voltage and capacitance-voltage dependences are presented. Energy band diagram construction procedure and results of the numerical simulation of experimental data are also discussed.
Total Pages: 63-77 (15)
Purchase Chapter
Book Details