Metallic Oxynitride Thin Films by Reactive Sputtering and Related Deposition Methods: Process, Properties and Applications

by

Filipe Vaz, Nicolas Martin, Martin Fenker

DOI: 10.2174/97816080515641130101
eISBN: 978-1-60805-156-4, 2013
ISBN: 978-1-60805-157-1



Indexed in: EBSCO.

Oxynitride thin film technology is rapidly impacting a broad spectrum of applications, ranging from decorative functions (through opto...[view complete introduction]
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Growth and Characterization of Chromium Oxynitride Thin Films Prepared Using Reactive Unbalanced Magnetron Sputtering in Presence of Air as Reactive Gas

- Pp. 133-162 (30)

Saïd Agouram, Guy Terwagne and Franz Bodart

Abstract

Chromium nitride and chromium oxynitride thin films were successfully deposited onto carbon, silicon and low carbon steel substrates by DC reactive magnetron sputtering using a chromium metallic target. Argon-nitrogen and argon-air mixtures were used as reactive gases to deposit CrN and Cr<sub>x</sub>N<sub>y</sub>O<sub>z</sub> films, respectively. The total flow (argon + reactive gas) was kept constant during all deposition processes. Relative humidity of air (water vapour pressure) was systematically changed from 0 to 90 % RH. Behaviour of the cathode was studied as a function of reactive gas flow and water vapour pressure. Evolution of the deposition rate and composition of the deposited films with increasing of reactive gas flow and amount of water vapour injected into the process was studied by Rutherford Backscattering Spectroscopy (RBS) and Resonant Nuclear Reaction Analysis (RNRA). The chemical bond was determined by Energy Electron Induced X-ray Spectroscopy (LEEIXS) and X-ray Photoemission spectroscopy (XPS). Hydrogen and nitrogen profiles were determined by RNRA. RBS and LEEIXS results have shown that in metallic mode, the composition can be fitted by CrN and Cr<sub>2</sub>O<sub>3</sub> stoichiometries, but in compound mode the CrO<sub>2</sub> stoichiometry predominates. XPS results have shown the coexistence of another phase with (CrO<sub>2</sub>)<sub>3</sub>N stoichiometry. Its proportion depends on the N content in thin films.

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