Chapter 1

Ion Implantation Profile in Patterned Substrate

Kunihiro Suzuki

Abstract

We treat analytical models for two-dimensional profiles in patterned substrates. It is shown that the doses in the scaled MOSFET’s gates become significantly smaller that the doses in the large gate. We should therefore be careful about ion implantation conditions in scaled devices considering the two-dimensional effects. We further evaluated the relationship between vertical and lateral junction depth using the model.

Total Pages: 3-17 (15)

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