Chapter 2
Analytical Model for Two-Dimensional Profile in MOSFET’s
Kunihiro Suzuki
Abstract
Two-dimensional profile model for ion implantation at high tilt angle was derived, in order to describe the pocket ion implantation of MOSFETs. Then we can generate two-dimensional profile of ion implantation for the full MOS process neglecting diffusion of dopants, in order to predict electrical characteristic of MOSFETs.
Total Pages: 18-31 (14)
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