Chapter 5

Dose Loss

Kunihiro Suzuki

Abstract

Ion implanted impurity also plays a role for sputtering substrate atoms. The profiles are influenced by the sputtering. The database for the sputtering has also been developed. We described a model for the profiles where sputtering phenomenon is included. The model predicts the profile becomes invariable when the dose exceeds a certain value.

Total Pages: 69-77 (9)

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