Ion Implantation and Activation

Volume 3

by

Kunihiro Suzuki

DOI: 10.2174/97816080579241130301
eISBN: 978-1-60805-792-4, 2013
ISBN: 978-1-60805-793-1
ISSN: 2589-2940 (Print)
ISSN: 2215-0005 (Online)



Indexed in: EBSCO.

Ion Implantation and Activation – Volume 3 presents the derivation process of related models in a comprehensive step ...[view complete introduction]
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Simple Treatment of Transient Enhanced Diffusion

- Pp. 83-100 (18)

Kunihiro Suzuki

Abstract

A two-stream model which describes impurity flux and point defect flux independently has been proposed. Equation for point defect flux gives macroscopic information about the impurity flux equation, such as enhanced diffusion coefficient and time duration of TED. The model also accommodates the ramp up process where enhanced diffusion and time duration parameters become variable. This simple model can be controlled and tuned simply and gives us prominent features of TED.

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