Ion Implantation and Activation

Volume 3

by

Kunihiro Suzuki

DOI: 10.2174/97816080579241130301
eISBN: 978-1-60805-792-4, 2013
ISBN: 978-1-60805-793-1
ISSN: 2589-2940 (Print)
ISSN: 2215-0005 (Online)



Indexed in: EBSCO.

Ion Implantation and Activation – Volume 3 presents the derivation process of related models in a comprehensive step ...[view complete introduction]
US $
Buy Personal eBook
49
Order Library eBook
196
Order Printed Copy
*74
Order PDF + Printed Copy (Special Offer)
*98

*(Excluding Mailing and Handling)

🔒Secure Checkout Personal information is secured with SSL technology
Download Flyer

Thermal Oxidation

- Pp. 101-119 (19)

Kunihiro Suzuki

Abstract

Oxidation model is derived by considering diffusion fluxes in gas phase atmosphere, growing oxide layer, and reaction of oxidant and substrate Si atoms at SiO<sub>2</sub>/Si interface. This model gives simple time dependence of growing SiO<sub>2</sub> layer thickness. The impurities in the Si substrate redistribute during the oxidation. We treat the redistributed profile as moving boundary one, and derive the corresponding model. The model well predicts B depletion at the SiO<sub>2</sub>/Si interface.

Purchase Chapter  Book Details

Advertisement


Webmaster Contact: info@benthamscience.net Copyright © 2019 Bentham Science