Ion Implantation and Activation

Volume 3

by

Kunihiro Suzuki

DOI: 10.2174/97816080579241130301
eISBN: 978-1-60805-792-4, 2013
ISBN: 978-1-60805-793-1
ISSN: 2589-2940 (Print)
ISSN: 2215-0005 (Online)



Indexed in: EBSCO.

Ion Implantation and Activation – Volume 3 presents the derivation process of related models in a comprehensive step ...[view complete introduction]
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Segregation

- Pp. 120-127 (8)

Kunihiro Suzuki

Abstract

Segregation is a coefficient defined as the ratio of impurity concentrations at both sides of two different layers, which influences the diffusion profiles. However, the ratio is rarely in thermal equilibrium in general cases. Hence, the evaluation of the value of the segregation is difficult. It is found that the thermal equilibrium of segregation has been established in the redistribution profile of impurities in oxidized polycrystalline Si (polysilicon) because the diffusion coefficient is much larger than that in Si. The redistribution model is derived, and related segregation values are evaluated.

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