Bipolar Transistor and MOSFET Device Models

by

Kunihiro Suzuki

DOI: 10.2174/97816810826151160101
eISBN: 978-1-68108-261-5, 2016
ISBN: 978-1-60805-713-9



Indexed in: EBSCO.

Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the informatio...[view complete introduction]
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Various Channel Doping Profile MOSFET Models

- Pp. 399-431 (33)

Kunihiro Suzuki

Abstract

Non uniform channel doping profile enables us to control threshold voltage suppressing short channel effects. We showed how threshold voltage V<sub>th</sub> is controlled for various channel doping profiles such as epi-channel, and counter doped channel. V<sub>th</sub> is controlled by the thickness of epi-layer in epi-channel MOSFETs and it is controlled widely with centroid and dose in counter doped channel MOSFETs. The models were verified by comparing with numerical data. The feasibility of counter doped channel is also studied.

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