Bipolar Transistor and MOSFET Device Models


Kunihiro Suzuki

DOI: 10.2174/97816810826151160101
eISBN: 978-1-68108-261-5, 2016
ISBN: 978-1-68108-262-2

Indexed in: EBSCO.

Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the informatio...[view complete introduction]
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The Short Channel MOSFET Model

- Pp. 433-463 (31)

Kunihiro Suzuki


Short channel MOSFET model was presented. The difficulty for the model exists in that depletion width changes along the channel. A universal channel depletion width parameter was proposed, which effectively expresses the channel depletion width variation for various device parameters and bias conditions. Using this parameter, a two-dimensional potential distribution was solved and a corresponding threshold voltage model was derived, which reproduces the numerical data of sub-0.1-m gate length devices. We further extend the model to non-uniform channel doping devices of epi-MOSFETs.

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