Bipolar Transistor and MOSFET Device Models

by

Kunihiro Suzuki

DOI: 10.2174/97816810826151160101
eISBN: 978-1-68108-261-5, 2016
ISBN: 978-1-60805-713-9



Indexed in: EBSCO.

Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the informatio...[view complete introduction]
US $
Buy Personal eBook
129
Order Library eBook
516
Order Printed Copy
*193
Order PDF + Printed Copy (Special Offer)
*257

*(Excluding Mailing and Handling)

🔒Secure Checkout Personal information is secured with SSL technology
Download Flyer

The Short Channel MOSFET Model

- Pp. 433-463 (31)

Kunihiro Suzuki

Abstract

Short channel MOSFET model was presented. The difficulty for the model exists in that depletion width changes along the channel. A universal channel depletion width parameter was proposed, which effectively expresses the channel depletion width variation for various device parameters and bias conditions. Using this parameter, a two-dimensional potential distribution was solved and a corresponding threshold voltage model was derived, which reproduces the numerical data of sub-0.1-m gate length devices. We further extend the model to non-uniform channel doping devices of epi-MOSFETs.

Purchase Chapter  Book Details

Advertisement


Webmaster Contact: info@benthamscience.net Copyright © 2019 Bentham Science