Bipolar Transistor and MOSFET Device Models

by

Kunihiro Suzuki

DOI: 10.2174/97816810826151160101
eISBN: 978-1-68108-261-5, 2016
ISBN: 978-1-68108-262-2



Indexed in: EBSCO.

Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the informatio...[view complete introduction]
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The Single-Gate SOI MOSFET Model

- Pp. 465-493 (29)

Kunihiro Suzuki

Abstract

Single-gate SOI MOSFET has been proposed to alleviate scaling limit of bulk MOSFETs. We show an analytical model for threshold voltage for the device considering two-dimensional effects in both SOI and buried oxide layers. The model explains the dependence of short channel effects on the device parameters of channel-doping concentration, gate oxide, SOI, and buried oxide thicknesses, which agree well with numerical data.

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