Chapter 8

The Single-Gate SOI MOSFET Model

Kunihiro Suzuki

Abstract

Single-gate SOI MOSFET has been proposed to alleviate scaling limit of bulk MOSFETs. We show an analytical model for threshold voltage for the device considering two-dimensional effects in both SOI and buried oxide layers. The model explains the dependence of short channel effects on the device parameters of channel-doping concentration, gate oxide, SOI, and buried oxide thicknesses, which agree well with numerical data.

Total Pages: 465-493 (29)

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