Bipolar Transistor and MOSFET Device Models

by

Kunihiro Suzuki

DOI: 10.2174/97816810826151160101
eISBN: 978-1-68108-261-5, 2016
ISBN: 978-1-68108-262-2



Indexed in: EBSCO.

Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the informatio...[view complete introduction]
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The Double-Gate SOI MOSFET Model

- Pp. 495-545 (51)

Kunihiro Suzuki

Abstract

Double-gate SOI MOSFET is proposed to overcome the scaling limit of bulk MOSFETs. The device structure and corresponding device characteristics are quite different from those of bulk MOSFETs. The potential distribution of the device is investigated. The models for long channel and short channel devices are derived. The results show that remarkable attention should be paid to the threshold voltage adjustment of the double-gate SOI MOSFETs. n+-p+ polycrystalline Si gate double-gate SOI MOSFETs are also proposed to adjust the threshold voltage without introducing new gate materials, and their superb device characteristics are demonstrated.

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