Bipolar Transistor and MOSFET Device Models

by

Kunihiro Suzuki

DOI: 10.2174/97816810826151160101
eISBN: 978-1-68108-261-5, 2016
ISBN: 978-1-60805-713-9



Indexed in: EBSCO.

Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the informatio...[view complete introduction]
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Parasitic Limitations of MOSFETs: Gate Fringe Capacitance, Silicided Source/Drain Resistance, and Threshold Voltage Shift Due to Impurity Penetration through a Thin Gate Oxide

- Pp. 547-582 (36)

Kunihiro Suzuki

Abstract

Parasitic capacitance and resistance associated with source/drain silicide contacts are not scaled down, and they have a large influence on the device characteristics considering the scaling effect. The fringe capacitance and source/drain resistance are investigated in this chapter. Futher, the impact of B penetration through gate oxide on threshold voltage is analyzed. As the device is scaled down, the impurities in polycrystalline Si gate tend to penetrate the substrate through the thin gate oxide, and the influence of the penetrated impurity to the shift of threshold voltage becomes significant.

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