Ion Implantation and Activation

Volume 1

by

Kunihiro Suzuki

DOI: 10.2174/97816080578181130101
eISBN: 978-1-60805-781-8, 2013
ISBN: 978-1-60805-782-5
ISSN: 2589-2940 (Print)
ISSN: 2215-0005 (Online)



Indexed in: EBSCO.

Ion Implantation and Activation – Volume 1 presents the derivation process of ...[view complete introduction]
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Selection of Impurities

- Pp. 3-7 (5)

Kunihiro Suzuki

Abstract

Various impurities are used in VLSI processes. The key factors for the selection of the impurities are their solid solubility and diffusion coefficient. B, As, P are commonly used as doping impurities due to their high solid solubility. In and Sb are sometimes used to realize shallow junctions due to their low diffusion coefficients. We briefly showwhere various impurities are used in two distinguished devices of bipolar transistors and MOS FET’s.

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