- Pp. 302-375 (74)Kunihiro Suzuki
Ion implantation profiles are expressed by the Pearson function with first, second, third and fourth moment parameters of Rp , &#916;Rp , &#947; , and &#946;. We can derive an analytical model for these profile moments by solving a Lindhard-Scharf-Schiott (LSS) integration equation using perturbation approximation. This analytical model reproduces Monte Carlo data which were well calibrated to reproduce a vast experimental database. The extended LSS theory is vital for instantaneously predicting ion implantation profiles with any combination of incident ions and substrate atoms including their energy dependence.